Power MOSFET. SUK3015 Datasheet

SUK3015 MOSFET. Datasheet pdf. Equivalent


Sanken SUK3015
VDSS = 300 V, RDS(ON) = 0.15 Ω
N-channel Power MOSFET
SUK3015
Data Sheet
Description
SUK3015 includes a low on-resistance N-channel
power MOSFET with zener diode for ESD protection.
The package of SUK3015 is TO220S that is surface
mount package and high heat release.
Package
TO220S
(4)
(4)
Features
Automotive Qualified
Low On Resistance
ESD Protection Zener on Gate
100% Avalanche Tested
Compliant with RoHS directive
VDSS ------------------------------------ 300 V (ID = 100 μA)
ID ------------------------------------------------------- ± 15 A
RDS(ON) ---------------0.15 Ω max. (ID = 7 A, VGS = 10 V)
trr ------------------------------------------------ 160 ns (typ.)
Applications
DC/DC Converter
Other Switched-mode Power Supply
(1) (2) (3)
(3) (2) (1)
Not to scale
D(2)(4)
(1) Gate
G(1)
(2) Drain
(3) Source
(4) Drain
S(3)
SUK3015-DSE Rev.1.0
SANKEN ELCTRIC CO.,LTD.
Sep. 06, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
1


SUK3015 Datasheet
Recommendation SUK3015 Datasheet
Part SUK3015
Description N-channel Power MOSFET
Feature SUK3015; VDSS = 300 V, RDS(ON) = 0.15 Ω N-channel Power MOSFET SUK3015 Data Sheet Description SUK3015 inclu.
Manufacture Sanken
Datasheet
Download SUK3015 Datasheet




Sanken SUK3015
SUK3015
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
VDSS
VGSS
ID
Pulsed Drain Current
ID(PULSE)
Single Pulse Avalanche Energy
EAS
Avalanche Current
Power Dissipation
IAS
PD
Drain to Source dv/dt 1
dv/dt 1
Peak Diode Recovery dv/dt 2
dv/dt 2
Peak Diode Recovery di/dt
Operating Junction Temperature
Storage Temperature Range
di/dt
TJ
TSTG
Test conditions
Pulse width 100 µs
Duty cycle 1 %
VDD = 49 V,
L = 120 µH,
IAS =26.7 A,
VGS = 16 V, RG = 0 Ω,
unclamped,
see Figure 1.
TC = 25 °C
VDD = 49 V,
L = 120 µH,
IAS =26.7 A,
VGS = 16 V, RG = 0 Ω,
unclamped,
see Figure 1.
VDD = 200 V,
L = 0.2 mH,
ISDP = 15 A,
see エラー! 参照元が
見つかりません。.
VDD = 200 V,
L = 0.2 mH,
ISDP = 15 A,
see エラー! 参照元が
見つかりません。.
Rating
300
± 25
± 15
± 60
50
26.7
89
3.0
8.5
190
150
55 to 150
Unit
V
V
A
A
mJ
A
W
V/ns
V/ns
A/µs
°C
°C
Thermal Characteristics
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Thermal Resistance
(Junction to Case)
RθJC
Test Conditions
Min. Typ. Max. Unit
− − 1.4 °C/W
SUK3015-DSE Rev.1.0
SANKEN ELCTRIC CO.,LTD.
Sep. 06, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
2



Sanken SUK3015
SUK3015
Electrical Characteristics
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Drain to Source Breakdown
Voltage
V(BR)DSS
Drain to Source Leakage Current
IDSS
Gate to Source Leakage Current
IGSS
Gate Threshold Voltage
VGS(th)
Forward Transconductance
Static Drain to Source
On-Resistance
Re(yfs)
RDS(ON)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
Source to Drain Diode Forward
Voltage
tf
VSD
Source to Drain Diode Reverse
Recovery Time
trr
Test Conditions
ID = 100 μA, VGS = 0 V
VDS = 300 V, VGS = 0 V
VGS = ± 20 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 7 A
ID = 7 A, VGS = 10 V
VDS = 10 V
VGS = 0 V
f = 1 MHz
VDD = 200 V
ID = 7 A
VGS = 10 V,
RG = 15.6 Ω,
RL = 28.6 Ω,
see Figure 2.
ISD = 7 A, VGS = 0 V
ISDP = 15 A,
di/dt = 100 A/µs,
see エラー! 参照元が
見つかりません。.
Min.
300
1.5
11
Typ.
2.0
1800
420
85
15
34
112
144
160
Max.
100
10
2.5
0.15
1.2
Unit
V
µA
µA
V
S
Ω
pF
ns
V
ns
SUK3015-DSE Rev.1.0
SANKEN ELCTRIC CO.,LTD.
Sep. 06, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
3







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