Isolated Transistor/Diode. UML2N Datasheet

UML2N Transistor/Diode. Datasheet pdf. Equivalent


JCET UML2N
JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-353 Plastic-Encapsulate Transistors
UML2N Isolated Transistor and Diode
Features
z The 2SC2412K and a diodes are housed independently
In a package
MARKINGL2
SOT-353
TR MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
50
6
150
150
150
-55 to150
Units
V
V
V
mA
mW
DIO Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25
Parameter
DC reverse voltage
Peak Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Surge current
Junction temperature
Storage temperature
Symbol
VR
VRM
IFM
IO
ISURGE
Tj
TSTG
Limits
80
80
300
100
4
150
-55~+150
Unit
V
V
mA
mA
A
www.cj-elec.com
1
C,Mar,2016


UML2N Datasheet
Recommendation UML2N Datasheet
Part UML2N
Description Isolated Transistor/Diode
Feature UML2N; JC(T JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Transistors UM.
Manufacture JCET
Datasheet
Download UML2N Datasheet




JCET UML2N
TR ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Test conditions
IC=50μA,IE=0
IC=1mA,IB=0
IE=50μA,IC=0
VCB=60V,IE=0
VEB=5V,IC=0
VCE=6V,IC=1mA
IC=50mA,IB=5mA
VCE=12V,IC=2mA,f=100MHz
VCB=12V,IE=0,f=1MHz
Min
60
50
6
120
Typ Max
0.1
0.1
560
0.4
180
3.5
Unit
V
V
V
μA
μA
V
MHz
pF
DIO Electrical Ratings @Ta=25
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Reverse Recovery Time
Symbol
VF
IR
CT
trr
Min.
Typ.
Max.
1.2
0.1
3.5
Unit
V
μA
pF
4 ns
Conditions
IF=100mA
VR=70V
VR=6V,f=1MHz
VR=6V,
IF=5mA,RL=50
www.cj-elec.com
2
C,Mar,2016



JCET UML2N
SOT-353 Package Outline Dimensions
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
Min Max
0.900
1.100
0.000
0.100
0.900
1.000
0.150
0.350
0.100
2.000
0.150
2.200
1.150
1.350
2.150
2.400
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0° 8°
Dimensions In Inches
Min Max
0.035
0.043
0.000
0.004
0.035
0.039
0.006
0.014
0.004
0.079
0.006
0.087
0.045
0.053
0.085
0.094
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0° 8°
SOT-353 Suggested Pad Layout
www.cj-elec.com
3
C,Mar,2016







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