Transistors. UMF21N Datasheet

UMF21N Transistors. Datasheet pdf. Equivalent


ROHM UMF21N
Transistors
EMF21 / UMF21N
Power management (dual transistors)
EMF21 / UMF21N
2SA2018 and DTC114E are housed independently in a EMT6 or UMT6 package.
zApplication
Power management circuit
zFeatures
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
zStructure
Silicon epitaxial planar transistor
zExternal dimensions (Units : mm)
EMF21
(4)
(5)
(6)
1.2
1.6
(3)
(2)
(1)
Each lead has same dimensions
ROHM : EMT6 Abbreviated symbol : F21
UMF21N
zEquivalent circuits
(3) (2) (1)
DTr2
R1
R2
(4) (5)
R1=10k
R2=10k
Tr1
(6)
1.25
2.1
0.1Min.
ROHM : UMT6
EIAJ : SC-88
Each lead has same dimensions
Abbreviated symbol :F21
zPackage, marking, and packaging specifications
Type
Package
Marking
Code
Basic ordering unit(pieces)
EMF21
EMT6
F21
T2R
8000
UMF21N
UMT6
F21
TR
3000
1/4


UMF21N Datasheet
Recommendation UMF21N Datasheet
Part UMF21N
Description Transistors
Feature UMF21N; Transistors EMF21 / UMF21N Power management (dual transistors) EMF21 / UMF21N 2SA2018 and DTC114.
Manufacture ROHM
Datasheet
Download UMF21N Datasheet




ROHM UMF21N
Transistors
EMF21 / UMF21N
zAbsolute maximum ratings (Ta=25°C)
Tr1
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
ICP
Power dissipation
PC
Junction temperature
Tj
Range of storage temperature Tstg
1 Single pulse PW=1ms
2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
Limits
15
12
6
500
1.0
150(TOTAL)
150
55~+150
Unit
V
V
V
mA
A 1
mW 2
°C
°C
DTr2
Parameter
Symbol
Supply voltage
VCC
Input voltage
VIN
Collector current
IC
Output current
IO
Power dissipation
PC
Junction temperature
Tj
Range of storage temperature Tstg
1 Characteristics of built-in transistor.
2 Each terminal mounted on a recommended land.
Limits
50
10~+40
100
50
150(TOTAL)
150
55~+150
Unit
V
V
mA 1
mA
mW 2
°C
°C
zElectrical characteristics (Ta=25°C)
Tr1
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
12
15
6
270
Typ.
100
260
6.5
Max.
100
100
250
680
Unit
V
V
V
nA
nA
mV
MHz
pF
Conditions
IC=−1mA
IC=−10µA
IE=−10µA
VCB=−15V
VEB=−6V
IC=−200mA, IB=−10mA
VCE=−2V, IC=−10mA
VCE=−2V, IE=10mA, f=100MHz
VCB=−10V, IE=0mA, f=1MHz
DTr2
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Transition frequency of the device
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
Min.
3
30
7
0.8
Typ.
0.1
10
1
250
Max.
0.5
0.3
0.88
0.5
13
1.2
Unit
V
V
mA
µA
k
MHz
Conditions
VCC=5V, IO=100µA
VO=0.3V, IO=10mA
IO/II=10mA/0.5mA
VI=5V
VCC=50V, VI=0V
VO=5V, IO=5mA
VCE=10V, IE=−5mA, f=100MHz
2/4



ROHM UMF21N
Transistors
zElectrical characteristic curves
Tr1
1000
VCE=2V
Pulsed
100
1000
100
Ta=125°C
Ta=25°C
Ta=−40°C
10 10
EMF21 / UMF21N
VCE=2V
Pulsed
1000
Ta=25°C
Pulsed
100
IC/IB=50
IC/IB=20
10 IC/IB=10
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
1
1 10 100 1000
COLLECTOR CURRENT : IC (mA)
1
1 10 100 1000
COLLECTOR CURRENT : IC (mA)
Fig.2 DC current gain vs.
collector current
Fig.3 Collector-emitter saturation voltage
vs. collector current ( Ι )
1000
IC/IB=20
Pulsed
100 Ta=125°C
Ta=25°C
Ta=−40°C
10
10000
1000
100
IC/IB=20
Pulsed
Ta=25°C
Ta=−40°C
Ta=125°C
1000
VCE=2V
Ta=25°C
Pulsed
100
10
1
1 10 100 1000
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current ( ΙΙ )
10
1 10 100 1000
COLLECTOR CURRENT : IC (mA)
Fig.5 Base-emitter saturation voltage
vs. collector current
1
1 10 100 1000
EMITTER CURRENT : IE (mA)
Fig.6 Gain bandwidth product
vs. emitter current
1000
IE=0A
f=1MHz
Ta=25°C
100
Cib
10
Cob
1
0.1 1
10 100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
3/4





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