dual transistors. UMF21N Datasheet

UMF21N transistors. Datasheet pdf. Equivalent


JinYu UMF21N
Power management (dual transistors)
DESCRIPTION
Silicon epitaxial planar transistor
FEATURES
z 2SA2018 and DTC114E are housed independently
in a package.
z Power switching circuit in a single package.
z Mounting cost and area can be cut in half.
APPLICATION
Power management circuit, mobile telephone quiver circuit
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
UMF21N
SOT-363
1
Equivalent Circuit
(3) (2) (1)
DTr2
R1
R2
(4) (5)
Tr1
(6)
MARKING:F21
F21
TR1 MAXIMUM RATINGS Ta=25unless otherwise noted
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
DTR2 Absolute maximum ratings(Ta=25)
Parameter
Symbol
Supply voltage
VCC
Input voltage
VIN
Output current
IO
IC(MAX)
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
Value
-15
-12
-6
-0.5
0.15
150
-55-150
Limits
50
-10~40
50
100
150
150
-55~150
Units
V
V
V
A
W
Unit
V
V
mA
mW
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05


UMF21N Datasheet
Recommendation UMF21N Datasheet
Part UMF21N
Description dual transistors
Feature UMF21N; Power management (dual transistors) DESCRIPTION Silicon epitaxial planar transistor FEATURES z 2SA20.
Manufacture JinYu
Datasheet
Download UMF21N Datasheet




JinYu UMF21N
EMF23
TR1 ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Test conditions
IC=-10μA, IE=0
IC=-1mA, IB=0
IE=-10μA, IC=0
VCB= -15 V, IE=0
VEB=- 6V, IC=0
VCE=-2V, IC=-10mA
IC=-200mA,IB=-10mA
VCE=-2V,IC=-10mA, f=100MHz
VCB=-10V,IE=0,f=1MHz
Min
-15
-12
-6
270
Typ
260
6.5
Max
-0.1
-0.1
680
-0.25
Unit
V
V
V
μA
μA
V
MHz
pF
DTR2 Electrical characteristics (Ta=25)
Parameter
Symbol Min.
Input voltage
VI(off)
VI(on)
3
Output voltage
VO(on)
Input current
II
Output current
IO(off)
DC current gain GI 30
Input resistance
R1
7
Resistance ratio
R2/R1
0.8
Transition frequency
fT
Typ
10
1
250
Max.
0.5
0.3
0.88
0.5
13
1.2
Unit
V
V
mA
μA
K
MHz
Conditions
VCC=5V ,IO=100μA
VO=0.3V ,IO=10 mA
IO/II=10mA/0.5mA
VI=5V
VCC=50V, VI=0
VO=5V ,IO=5mA
VCE=10V ,IE=-5mA,f=100MHz
2
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05





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