Effect Transistor. SDD20N03L Datasheet

SDD20N03L Transistor. Datasheet pdf. Equivalent


SamHop Microelectronics SDD20N03L
SDU/D20N03L
SamHop Microelectronics Corp.
July 2004 ver1.2
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
30V
ID RDS(ON) ( m W ) Max
15 @ VGS = 10V
35A
32 @ VGS = 4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
D
G
S
SDU SERIES
TO-252AA(D-PAK)
GDS
SDD SERIES
TO-251(l-PAK)
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @TJ=125 C
-Pulsed a
Drain-Source Diode Forward Current
Symbol
VDS
VGS
ID
IDM
IS
Limit
30
20
35
87
20
Unit
V
V
A
A
A
Maximum Power Dissipation @Tc=25 C
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
PD
TJ, TSTG
R JC
R JA
50
-55 to 175
3
50
W
C
C /W
C /W
1


SDD20N03L Datasheet
Recommendation SDD20N03L Datasheet
Part SDD20N03L
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Feature SDD20N03L; SDU/D20N03L SamHop Microelectronics Corp. July 2004 ver1.2 N-Channel Logic Level Enhancement Mode.
Manufacture SamHop Microelectronics
Datasheet
Download SDD20N03L Datasheet




SamHop Microelectronics SDD20N03L
S DU/D20N03L
E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted)
P a ra meter
S ymbol
C ondition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS a
BVDSS VGS = 0V, ID = 250uA 30
IDSS VDS = 24V, VGS = 0V
IGSS VGS = 20V, VDS = 0V
V
10 uA
100 nA
Gate Threshold Voltage
Drain-S ource On-S tate R esistance
V G S (th)
R DS(ON)
VDS = VGS, ID = 250uA
VGS = 10V, ID =10A
VGS = 4.5V, ID = 8A
1 1.5 3 V
13.5 15 m ohm
23 32 m ohm
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS b
ID(ON)
gFS
VDS = 10V, VGS = 10V
VDS = 10V, ID = 20A
55
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS b
VDD =15V, VGS = 0V
f = 1.0MHZ
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall time
tD(ON) VDD = 15V
tr
ID =1A
VGS = 10V
tD(OFF) VGEN = 6 ohm
tf
Total Gate Charge
Qg VDS = 15V,ID = 20A,VGS =10V
VDS = 15V,ID = 20A,VGS =4.5V
Gate-S ource Charge
Gate-Drain Charge
Qgs VDS = 15V, ID = 20A
Qgd VGS =10V
25
930
400
120
30
20
34
10
26.5
13.5
4.8
5.4
A
S
PF
PF
PF
ns
ns
ns
ns
nC
nC
nC
nC
2



SamHop Microelectronics SDD20N03L
S DU/D20N03L
E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
DRAIN-SOURCE DIODE CHARACTERISTICS a
Diode Forward Voltage
VSD VGS = 0V, Is = 20A
Min Typ Max Unit
1.3 V
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
60
V GS =10,9,8,7,6,5,4V
50
40
30
20
10 V GS =3V
0
0123 4 56
V DS , Drain-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
2400
2000
1600
1200
800
C is s
400
0
0
5 10 15
C oss
C rss
20 25
30
V DS , Drain-to S ource Voltage (V )
F igure 3. C apacitance
40
25 C
30 T j=125 C
20
10
-55 C
0
0 1 2 3 4 56
V G S , G ate-to-S ource Voltage (V )
F igure 2. Trans fer C haracteris tics
1.3
V GS =10V
1.2
1.1
1.0
0.9
T j=125 C
25 C
-55 C
0.8
0.7
0 10 20
30 40
ID, Drain C urrent(A)
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
3







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