DDR4 SDRAM. MT40A1G4 Datasheet

MT40A1G4 SDRAM. Datasheet pdf. Equivalent


Micron MT40A1G4
DDR4 SDRAM
MT40A1G4
MT40A512M8
MT40A256M16
Features
• VDD = VDDQ = 1.2V ±60mV
• VPP = 2.5V, –125mV/+250mV
• On-die, internal, adjustable VREFDQ generation
• 1.2V pseudo open-drain I/O
• TC maximum up to 95°C
– 64ms, 8192-cycle refresh up to 85°C
– 32ms, 8192-cycle refresh at >85°C to 95°C
• 16 internal banks (x4, x8): 4 groups of 4 banks each
• 8 internal banks (x16): 2 groups of 4 banks each
• 8n-bit prefetch architecture
• Programmable data strobe preambles
• Data strobe preamble training
• Command/Address latency (CAL)
• Multipurpose register READ and WRITE capability
• Write and read leveling
• Self refresh mode
• Low-power auto self refresh (LPASR)
• Temperature controlled refresh (TCR)
• Fine granularity refresh
• Self refresh abort
• Maximum power saving
• Output driver calibration
• Nominal, park, and dynamic on-die termination
(ODT)
• Data bus inversion (DBI) for data bus
• Command/Address (CA) parity
• Databus write cyclic redundancy check (CRC)
• Per-DRAM addressability
• Connectivity test (x16)
• sPPR and hPPR capability
• JEDEC JESD-79-4 compliant
4Gb: x4, x8, x16 DDR4 SDRAM
Features
Options1
• Configuration
– 1 Gig x 4
– 512 Meg x 8
– 256 Meg x 16
• FBGA package (Pb-free) – x4, x8
– 78-ball (9mm x 11.5mm) – Rev. A
– 78-ball (9mm x 10.5mm) – Rev. B
• FBGA package (Pb-free) – x16
– 96-ball (9mm x 14mm) – Rev. A
– 96-ball (9mm x 14mm) – Rev. B
• Timing – cycle time
– 0.625ns @ CL = 22 (DDR4-3200)
– 0.682ns @ CL = 20 (DDR4-2933)
– 0.682ns @ CL = 21 (DDR4-2933)
– 0.750ns @ CL = 18 (DDR4-2666)
– 0.750ns @ CL = 19 (DDR4-2666)
– 0.833ns @ CL = 16 (DDR4-2400)
– 0.833ns @ CL = 17 (DDR4-2400)
– 0.937ns @ CL = 15 (DDR4-2133)
– 0.937ns @ CL = 16 (DDR4-2133)
– 1.071ns @ CL = 13 (DDR4-1866)
• Operating temperature
– Commercial (0° TC 95°C)
– Industrial (–40° TC 95°C)
– Revision
Marking
1G4
512M8
256M162
HX
RH
HA
GE
-062E
-068E
-068
-075E
-075
-083E
-083
-093E
-093
-107E
None
IT
:A
:B
Notes:
1. Not all options listed can be combined to
define an offered product. Use the part
catalog search on http://www.micron.com
for available offerings.
2. Not available on Rev. A.
3. Restricted and limited availability.
09005aef84af6dd0
4gb_ddr4_dram.pdf - Rev. G 1/17 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
‹ 2014 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.


MT40A1G4 Datasheet
Recommendation MT40A1G4 Datasheet
Part MT40A1G4
Description DDR4 SDRAM
Feature MT40A1G4; DDR4 SDRAM MT40A1G4 MT40A512M8 MT40A256M16 Features • VDD = VDDQ = 1.2V ±60mV • VPP = 2.5V, –125mV/+.
Manufacture Micron
Datasheet
Download MT40A1G4 Datasheet




Micron MT40A1G4
4Gb: x4, x8, x16 DDR4 SDRAM
Features
Table 1: Key Timing Parameters
Speed Grade
-062E6
-068E5
-0685
-075E4
-0754
-083E3
-0833
-093E2
-0932
-107E1
Data Rate (MT/s)
3200
2933
2933
2666
2666
2400
2400
2133
2133
1866
Target tRCD-tRP-CL
22-22-22
20-20-20
21-21-21
18-18-18
19-19-19
16-16-16
17-17-17
15-15-15
16-16-16
13-13-13
tRCD (ns)
13.75
13.64
14.32
13.5
14.25
13.32
14.16
14.06
15
13.92
tRP (ns)
13.75
13.64
14.32
13.5
14.25
13.32
14.16
14.06
15
13.92
CL (ns)
13.75
13.64
14.32
13.5
14.25
13.32
14.16
14.06
15
13.92
Notes:
1. Backward compatible to 1600, CL = 11.
2. Backward compatible to 1600, CL = 11 and 1866, CL = 13.
3. Backward compatible to 1600, CL = 11; 1866, CL = 13; and 2133, CL = 15.
4. Backward compatible to 1600, CL = 11; 1866, CL = 13; 2133, CL = 15; and 2400, CL = 17.
5. Backward compatible to 1600, CL = 11; 1866, CL = 13; 2133, CL = 15; 2400, CL = 17; and 2666, CL = 19. Speed
offering may have restricted availability.
6. Backward compatible to 1600, CL = 11; 1866, CL = 13; 2133, CL = 15; 2400, CL = 17; 2666, CL = 19; and 2933,
CL = 20 and CL = 21. Speed offering may have restricted availability.
Table 2: Addressing
Parameter
Number of bank groups
Bank group address
Bank count per group
Bank address in bank group
Row addressing
Column addressing
Page size1
1024 Meg x 4
4
BG[1:0]
4
BA[1:0]
64K (A[15:0])
1K (A[9:0])
512B / 1KB2
512 Meg x 8
4
BG[1:0]
4
BA[1:0]
32K (A[14:0])
1K (A[9:0])
1KB
256 Meg x 16
2
BG0
4
BA[1:0]
32K (A[14:0])
1K (A[9:0])
2KB
Notes:
1. Page size is per bank, calculated as follows:
Page size = 2COLBITS × ORG/8, where COLBIT = the number of column address bits and ORG = the number of
DQ bits.
2. Die revision dependant.
09005aef84af6dd0
4gb_ddr4_dram.pdf - Rev. G 1/17 EN
2 Micron Technology, Inc. reserves the right to change products or specifications without notice.
‹ 2014 Micron Technology, Inc. All rights reserved.



Micron MT40A1G4
4Gb: x4, x8, x16 DDR4 SDRAM
Features
Figure 1: Order Part Number Example
Example Part Number: MT40A1G4-083:B
MT40A
Configuration
-
Package
Speed
:
Revision
Configuration
1 Gig x 4
1G4
512 Meg x 8 512M8
256Meg x 16 256M16
Package
78-ball 9.0mm x 11.5mm FBGA
78-ball 8.0mm x 10.5mm FBGA
96-ball 9.0mm x 14.0mm FBGA
96-ball 9.0mm x 14.0mm FBGA
Mark
HX
RH
HA
GE
Revision
:A, :B
Case Temperature
Commercial
None
Industrial
IT
–107E
–093
–093E
–083
–083E
–075
–075E
–068
–068E
–062E
Speed Grade
tCK = 1.071ns, CL = 13
tCK = 0.937ns, CL = 16
tCK = 0.937ns, CL = 15
tCK = 0.833ns, CL = 17
tCK = 0.833ns, CL = 16
tCK = 0.750ns, CL = 19
tCK = 0.750ns, CL = 18
tCK = 0.682ns, CL = 21
tCK = 0.682ns, CL = 20
tCK = 0.625ns, CL = 22
09005aef84af6dd0
4gb_ddr4_dram.pdf - Rev. G 1/17 EN
3 Micron Technology, Inc. reserves the right to change products or specifications without notice.
‹ 2014 Micron Technology, Inc. All rights reserved.





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