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Power MOSFET. IRFB7540PbF Datasheet |
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Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
D
G
S
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
GDS
TO-220AB
IRFB7540PbF
G
Gate
StrongIRFET™
IRFB7540PbF
IRFS7540PbF
IRFSL7540PbF
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max
ID
60V
4.2m
5.1m
110A
DD
S
G
D2Pak
IRFS7540PbF
D
Drain
S
GD
TO-262
IRFSL7540PbF
S
Source
Base part number
IRFB7540PbF
IRFSL7540PbF
IRFS7540PbF
Package Type
TO-220
TO-262
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
IRFB7540PbF
IRFSL7540PbF
IRFS7540PbF
IRFS7540TRLPbF
14
ID = 65A
12
10
TJ = 125°C
8
6
4
TJ = 25°C
2
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1 www.irf.com © 2014 International Rectifier
120
100
80
60
40
20
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
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IRFB/S/SL7540PbF
Absolute Maximum Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Max.
110
80
430
160
1.1
Units
A
W
W/°C
VGS
TJ
TSTG
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
± 20
-55 to + 175
300
V
°C
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Thermally limited) Single Pulse Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
RJC Junction-to-Case
RCS
Case-to-Sink, Flat Greased Surface (TO-220)
RJA Junction-to-Ambient (TO-220)
RJA Junction-to-Ambient (PCB Mount) (D2Pak)
180
313
See Fig 15, 16, 23a, 23b
Typ.
–––
0.50
–––
–––
Max.
0.95
–––
62
40
mJ
A
mJ
Units
°C/W
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
IDSS
IGSS
RG
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Min.
60
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Typ.
–––
48
4.2
5.4
–––
–––
–––
–––
–––
2.2
Max. Units
Conditions
––– V VGS = 0V, ID = 250µA
––– mV/°C Reference to 25°C, ID = 1mA
5.1 m VGS = 10V, ID = 65A
–––
3.7
1.0
150
100
-100
VGS = 6.0V, ID = 33A
V VDS = VGS, ID = 100µA
µA
VDS = 60V, VGS = 0V
VDS = 60V,VGS = 0V,TJ =125°C
nA
VGS = 20V
VGS = -20V
–––
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 86µH, RG = 50, IAS = 65A, VGS =10V.
ISD 65A, di/dt 1130A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
R is measured at TJ approximately 90°C.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 25A, VGS =10V.
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IRFB/S/SL7540PbF
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff.(ER)
Coss eff.(TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg – Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
Output Capacitance (Time Related)
Min.
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
88
22
28
60
12
76
58
56
4555
415
270
430
550
Max. Units
Conditions
––– S VDS = 10V, ID = 65A
130 ID = 65A
–––
–––
nC
VVDGSS
=
=
30V
10V
–––
––– VDD = 30V
–––
–––
ns
ID = 65A
RG= 2.7
––– VGS = 10V
––– VGS = 0V
––– VDS = 25V
––– pF ƒ = 1.0MHz, See Fig.7
––– VGS = 0V, VDS = 0V to 48V
––– VGS = 0V, VDS = 0V to 48V
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
–––
–––
Typ.
–––
–––
Max. Units
Conditions
110
430
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
G
D
S
VSD
dv/dt
trr
Qrr
IRRM
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
––– ––– 1.2 V TJ = 25°C,IS = 65A,VGS = 0V
––– 11 ––– V/ns TJ = 175°C,IS = 65A,VDS = 60V
–––
–––
33
37
–––
–––
ns
TJ = 25°C
TJ = 125°C
VDD = 51V
IF = 65A,
–––
–––
36
47
–––
–––
nC
TJ = 25°C
TJ = 125°C
di/dt = 100A/µs
––– 1.9 ––– A TJ = 25°C
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