Static RAM. CDM6116A Datasheet

CDM6116A RAM. Datasheet pdf. Equivalent


GE CDM6116A
Random-Acee.. Memories (RAMs) _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
CDM6116A
Product Preview
A7 24 Vee
AS 23 A8
A5 3
A4 4
22 A9
21 WE
A3 20 OE
A2 S
AI 7
19 AIO
18 CE
AO 8
17 :t/08
:t/01
9
16 I107
:t/02
10
15 :1:/06
:t/03
II
14 :t/05
vss 12
13 I104
TOP VIEW
92CS-36942
TERMINAL ASSIGNMENT
CMOS 2048-Word by 8-Bit
Static RAM
Features:
• Fully static operation
• Single power supply: 4.5 Vt05.5 V
• All inputs and outputs directly TTL compatible
• 3-state outputs
• Industry standard 24-pin configuration
• Chip-enable gates address buffers for minimum standby current
• Data retention voltage: 2 V min.
The RCA-COM6116A Is a CMOS 2048-word by 8-bit static
random-access memory. It is designed for use in memory
systems where high-speed, low power and simplicity In use
are desirable. This device has common data inputs and data
outputs and utilizes aslngle power supply of 4.5 V to 5.5 V. A
chip-enable Input and an output-enable input are provided
for memory expansion and output buffer control.
The chip enable (CE) gates the address and output buffers
and powers down the chip to the low power standby mode.
The output enable (CE) controls the output buffers to
eliminate bus contention.
The COM6116A-2 and COM6116A-3 are supplied in a 24-
lead dual-In-line plastic package (E suffix). The COM-
6116A-9lssupplied in a 24-lead dual-in-line plastic package
(E suffix) and a 24-lead dual-in-line side-brazed ceramic
package (0 suffix).
Access Time (max.)
Output Enable Time (max.)
Operating Temperature
Operating Current (max.)
Standby Current
loos, (max.)
CDM6116A-2ICDM6116A-3 CDM6116A-9
200 ns I 150 ns
250 ns
120 ns I 60 ns
150 ns
0° to +70°C
40° to +85° C
35 mA I 35mA
40mA
I30llA
50llA
100 llA
OPERATING CONDITIONS at TA = 0 to +70·C, (CDM6116A-2, CDM6116A-3); TA = _40° to +85°C (CDM6116A-9)
For maximum reliability, operating conditions should be lelected so that operation Is always within the following ranges:
CHARACTERISTIC
DC Operating Voltage Range
Input Voltage Range
Input Signal Rise or Fall Time I:J.
LIMITS
ALL TYPES
MIN.
MAX.
4.5 5.5
V'H 2.2 Voo + 0.3
V'L -0.3
-tr,t,
0.8
5
A Input signal rise and fall tim8s longer than the maximum value can cause loss of stored data in the selected mode.
UNITS
V
JIS
File Number 1472
636 __________________________________________


CDM6116A Datasheet
Recommendation CDM6116A Datasheet
Part CDM6116A
Description CMOS 2048-Word by 8-Bit Static RAM
Feature CDM6116A; Random-Acee.. Memories (RAMs) _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ CDM6116A Product Preview A7 .
Manufacture GE
Datasheet
Download CDM6116A Datasheet




GE CDM6116A
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Random-Acce.. Memories (RAMs)
CDM6116A
AI
A9
A8
A7 INPUT
AS ADDRESS
A5 BUFFERS
A4
A3
A2
AI
AO
XY
DECODE
12el12e
MEMORY
MATRIX
OUTPUT
DATA
BUFFERS
1/08
r.l07
I/08
I/05
I/04
I103
I/02
I/O I
CE - V D D
WE -VSS
~
92CM-!l6943
Fig. 1 - Functlona' block diagram.
TRUTH TABLE
Ci Oi WE
HXX
L LH
LHL
LLL
L = LOW H = HIGH X = H or L
AOTOA10
X
STABLE
STABLE
STABLE
MODE
NOT SELECTED
READ
WRITE
WRITE
1/01 TO 1/08
HIGHZ
DATA OUT
DATA IN
DATA IN
DEVICE
CURRENT
STANDBY
ACTIVE
ACTIVE
ACTIVE
MAXIMUM RATINGS, Absolute-Maximum Ratings
DC SUPPLY-VOLTAGE RANGE, (Voo):
(Voltage referenced to V•• lerminal) ..................................................................................-0.3 to +7 V
INPUT VOLTAGE RANGE, ALL INPUTS ................................................................................-0.3 to +7 V
DC INPUT CURRENT, ANY ONE INPUT •..•••.•.•••••••.••••.••..••.•.•••••••••••.••••••••••••••••••...••.••••.•.••••..... ±10 mA
POWER DISSIPATION PER PACKAGE (Po):
For T. = -40· to +60. C (PACKAGE TYPE E) .............................................................................. 500 mW
ForT. = +60· to +65·C (PACKAGE TYPE E) ................................................. Derate Linearly at 8 mW/·C to 300 mW
For T. = -40· 10 +85. C (PACKAGE TYPE D) .............................................................................. 500 mW
DEVICE DISSIPATION PER OUTPUT TRANSISTOR
ForT. = FULL PACKAGE-TEMPERATURE RANGE (All Peckage Types) ................................................... 100 mW
OPERATING-TEMPERATURE RANGE (T.)
CDM6116A-2, CDM6116A-3 (PACKAGE TYPE E) ...................................................................... 0 to +70·C
CDM6116A-9 (PACKAGE TYPES 0, E) .............................................................................. -4010 +65·C
STORAGE TEMPERATURE RANGE (T...) ...•••••..•.••••••....•••••.••..••••••.•••••••...•••.•••.•••••.•.•••••.••..• -55 to +125·C
LEAD TEMPERATURE (DURING SOLDERING):
AI distance 1/16 ± 1/32 In. (1.59 ± 0.79 mm) from case for 10 s max. .. ................................................... +265·C
____________________________________________________________ 637



GE CDM6116A
Random-ACC888 Memories (RAMs) _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
CDM6116A
STATIC ELECTRICAL CHARACTERISTICS at T. = 0 to +70· C (CDM6116A-2, CDM6116A-3);
T. = -40· to +85·C (CDM6116A-9), Vee = S V ± 10%, Except a. noted
LIMITS
CHARACTERISTIC
CONDITIONS
CDM6116A-2
CDM6116A-3
CDM6116A-9 UNITS
MIN. TYP.- MAX. MIN. TYP.- MAX. MIN. TYP.· MAX.
Standby Device Ices
Current
leDS.
Output Voltage
Low Level VOL Max.
Output Voltage
High Level VOH Min.
Input Leakage
Current
l,N Max.
3-State Output
Leakage
Current
lOUT
CE= V,H
CE = Vee-0.2 V
leL = 2.1 mA
IOL=1pA
IOH = -1 mA
IOH = -1 pA
Vee = 5.5 V
V,N = 0 V to Vee
CEor DE = V,H
V,to = 0 V to Vee
- 0.6
-1
--
- 0.1
2.4 -
- Vee-0.1
- ±D.1
2-
30 -
0.4 -
--
0.6
1
-
0.1
- 2.4 -
- - ~ee-0.1
-±2 ±0.1
2-
0.3
50 -
1
0.4 - -
- - 0.1
- 2.4 -
-- Vee-0.1
±2 -
±0.1
2
100
0.4
-
-
-
±2
- ±D.5 ±2 -
±0.5 ±2 -
±0.5 ±2
mA
pA
V
V
pA
Operating
Device
Current
IOPER#
V,N = V,L. V,H
- - -20 35
20 35
28 40 mA
Input
~
Capacitance
C'N
V,N = 0 V.
f = 1 MHz. TA = 25· C
-
Output
Capacitance
C,O
VIto = 0 V.
f = 1 MHz TA = 25·C
-
-Typical values are for T. = 25· C and nominal Vee.
#Outputs open circuited; cycle time = Min. tCYCI•• duty = 100%.
4
6
6-
8-
4 6-
6 8-
46
pF
68
DYNAMIC ELECTRICAL CHARACTERISTICS at TA = 0 to +70·C (CDM6116A-2, CDM6116A-3);
TA = -40· to +8S·C (CDM6116A-9), Vee = S V ± 10%,
Input t" tf = 10 n8; CL = 100 pF and 1 TTL Load, Input Pulse Levels: 0.8 V to 2.4 V
LIMITS
CHARACTERISTIC
Read Cycle Time. See Fig. 2
Read Cycle Time
Address Access Time
Chip Enable Access Time
Chip Enable to Output Active
Output Enable to Output ValId
Output Enable to Output Active
Chip Disable to Output "High Z"
Output DIsable to Output "High Zoo
Output Hold from Address Change
CDM6116A-2 CDM6116A-3 CDM6116A-9 UNITS
MIN.t MAX. MIN.t MAX. MIN.t MAX.
- -tRC 200 150 250 -
-tAA
200 -
150 -
250
- -tACE - 200 150 250
-tcx 15
15 -
15 -
-tOEV 120 -
60 -
150 ns
tOEX 15 -
15 -
15 -
tcHZ 0 60 0 50 0 80
tOHZ 0 60 0 50 0 80
tOH 15 -
15 -
15 -
tTime required by a limit device to allow for the indicated function.
838 ____________________________________________________________





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)