Random-Access Memory. MWS5101 Datasheet

MWS5101 Memory. Datasheet pdf. Equivalent


GE MWS5101
Random-Access Memories (RAMs) _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
MWS5101
A3
A2
AI
AD
A5
AS
A7
VSS
OJ: I
001
012
I 22
2 21
~ 20
4 19
5 18
S 17
7 16
8 15
9 14
10 13
II 12
TOP VIEW
vOO
A4
rRlnW
QO
CS2
004
OI4
003
OI3
DO~
92CS-29976RI
TI;RMINAL ASSIGNMENT
256-Word by 4-Bit LSI Static
Random-Access Memory
Features:
• Industry standard pinout
• Output-Disable for common I/O systems
• Very low operating current-8 mA • 3-state data output for bus-oriented
= =at Voo 5 V and cycle time 1 ps
systems
• Two Chip-Select inputs-simple
• Separate data inputs and outputs
memory expansion
• Memory retention for standby battery
voltage of 2 V min
The RCA-MWS5101 is a 256-word by 4-bit static random-
access memory designed for use In memory systems where
high speed, very low operating current, and simplicity in
use are desirable. It has separate data inputs and outputs
and utilizes a single power supply of 4 to 6.5 volts.
Two Chir·Select inputs are provided to simplify system
expansion. An Output Disable control provides Wire-OR
capability and is also useful in common Input/Output
systems by forcing the output into a high-impedance state
during a write operation independent of the Chip-Select
input condition. The output assumes a high-impedance
state when the Output Disable is at high level or when the
chip is deselected by CS1 and/or CS2.
The high noise immunity of the CMOS technology is
preserved in this design. For TTL interfacing at 5-V
operation, excellent system noise margin is preserved by
using an external pull-up resistor at each input.
For Rpplications requiring wider temperature and operating
voltage ranges, the mechanically and functionally equivalent
static RAM, RCA-CDP1822, may be used
The MWS5101 types are supplied in 22-lead hermetic dual-
in-line, side-brazed ceramic packages (0 suffix), in 22-lead
dual-in-line plastic packages (E suffix), and in chip form (H
suffix).
OPERATIONAL MODES
MODE
READ
WRITE
WRITE
STANDBY
STANDBY
OUTPUT DISABLE
CIiTP Select 1
CS1
0
0
0
1
X
X
INPUTS
Chip Select 2 Output Disable
CS2 00
10
10
11
XX
0X
X1
Logic 1 = High
Logic 0 = Low
X = Don't Care
Read/Write
R/VI
1
0
0
X
X
X
OUTPUT
Read
Data In
High Impedance
High Impedance
High Impedance
High Impedance
I
File Number 1106
686 ___________________________________________________________


MWS5101 Datasheet
Recommendation MWS5101 Datasheet
Part MWS5101
Description 256-Word by 4-Bit LSI Static Random-Access Memory
Feature MWS5101; Random-Access Memories (RAMs) _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ MWS5101 A3 A2 AI AD A5 AS A7.
Manufacture GE
Datasheet
Download MWS5101 Datasheet




GE MWS5101
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Random-Access Memories (RAMs)
MWS5101
MAXIMUM RATINGS, Absolute-Maximum Values:
DC SUPPLY-VOLTAGE RANGE (Voo)
(All voltage referenced to Vss terminal) ......................................... -0.5 to -7 V
INPUT VOLTAGE RANGE, ALL INPUTS .....................................-0.5 to Vee + 0.5 V
DC INPUT CURRENT, ANY ONE INPUT ........................... , ................... ±10 mA
POWER DISSIPATION PER PACKAGE (Po)
For TA = -40 to +60° C (pACKAGE TYPE E) ............................. , ........... 500 mW
For TA = +60 to +85°C (PACKAGE TYPE E) .......... Derate Linearly at 12 mW/oC to 200 mW
For TA = -55 to +100°C (PACKAGE TYPE D) ....................................... 500 mW
For TA = +100 to +125°C (PACKAGE TYPE D) ....... Derate Linearly at 12 mW/oC to 200 mW
DEVICE DISSIPATION PER OUl PUT TRANSISTOR
FOR TA = FULL PACKAGE-TEMPERATURE RANGE (All Package Types) ............. 100 mW
OPERATING-TEMPERATURE RANGE (TA)
PACKAGE TYPE D ......................................................... · .-55 to +125°C
PACKAGE TYPE E ........................... . .............................-40 to +85°C
STORAGE TEMPERATURE RANGE (T",) .........................................-65 to +150°C
LEAD TEMPERATURE (DURING SOLDERING)
At distance 1/16 ± 1/32 Inch (1 59 ± 079 mm) from case for 10 s max .................. +265°C
OPERATING CONDITIONS at T A = Full Package·Temperature Range
For maximum reIJabil,ty, operating conditions should be selected
so that operation IS always within the following ranges:
CHARACTERISTIC
DC Operating· Voltage Range
Input Voltage Range
LIMITS
ALL TYPES
Min.
Max.
4 6.5
VSS
VDD
UNITS
V
-STATIC ELECTRICAL CHARACTERISTICS at TA = 0 to 70°C VDD = 5 V + 5%
TEST CONDITIONS
LIMITS
CHARACTERISTIC
Vo
(V)
VIN
(V)
MWS5101D
MWS5101E
Min. Typ.- Max.
UNITS
Quiescent Device
Cu rrent, I D D
L2 Types
L3 Types
-
-
0,5 -
0,5 -
25 50
100 200
tJ. A
Output Voltage:
Low· Level,
VOL
High· Level,
Input Low Voltage,
Input High Voltage,
Output Low (Sink)
Current,
Output High (Source)
Current,
Input Current,
VOH
VIL
VIH
101
10H
liN
3-State Output
Leakage Current,
lOUT
L2 Tvoes
L3 Types
Operating Current,
Input Capacitance,
Output Capacitance,
IDD1#
CIN
COUT
-
-
-
-
0.4
4.6
-
05
0,5
-
0,5 -
0
0,5 4.9 5
- --
- 3.5 -
0,5 2
4
0,5 -1
0,5 -
05
0,5 -
0,5 -
--
-2
-
-
-
4
5
10
-TYPical values are for TA = 2SoC and nominal VDD.
# Outputs open-circUited/cycle tlme=-1 ps.
0.1
-
1.5
-
-
-
±5
+5
±5
8
7.5
15
V
mA
tJ.A
mA
pF
______________________________________________________________ 687



GE MWS5101
Random-Acce.. Memories (RAMs) _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
MWS5101
OYNAMIC ELECTRICAL CHARACTERISTICS at T A =0 to 70oC, VOO =5 V ±5%,
tr,tf =20 ns, VIH =0.7 VOO' VI L =0.3 VOO' CL =100 pF
CHARACTE RISTIC
LIMITS
U
MWS5101D, MWS5101E
N
L2 Types
L3 Types
I
T
Min.t Typ.- Max. Min.t Typ~ Max. S
Read Cycle Times (Fig. 1)
Read Cycle
Access from
Address
tRC 250 -
- 350 -
-
- 150 250 - 200 350
tAA
Output Valid from
Chip·Select 1
tDOAl - 150 250 - 200 350
Output Valid from
- 150 250 - 200 350
Ch'P·Select 2
tDOA2
Output Valid from
-
Output Disable tDOA3
- 110 -
- 150 ns
Output Hold from
Ch,p·Select 1
20
tDOHl
-
- 20 -
-
Output Hold from
ChiD· Select 2
tDOH2
20
-
-
20 -
-
Output Hold from
20
Output Disable tDOH3
-
- 20 -
-
t Time required by a limit device to allow for the indicated function
- TYPical value. are for T A = 25°C and nomonal VDO
AD - A7
CH'P SELECT I
CHIP SELECT 2
READ/WRITE
DATA OUT
HIGH
IMPEDANCE
DATA OUT
VALID
HIGH
IMPEDANCE
92CM- 30244R4
Fig. 1 • Read cycle timing waveforms
688 ________________________________________________







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