Read-Only Memory. CDM5332 Datasheet

CDM5332 Memory. Datasheet pdf. Equivalent

CDM5332 Datasheet
Recommendation CDM5332 Datasheet
Part CDM5332
Description CMOS 4096-Word x 8-Bit Static Read-Only Memory
Feature CDM5332; At 2' VOO A. 23 A8 A5 22 A9 .,A4 21 All 20 CSIICE A2 19 AID A I I. CS2 ,."0 17 07 DO I. D1 10 .
Manufacture GE
Datasheet
Download CDM5332 Datasheet




GE CDM5332
At 2' VOO
A. 23 A8
A5 22 A9
.,A4 21 All
20 CSIICE
A2 19 AID
A I I. CS2
,."0 17 07
DO I.
D1 10
D2
,.15 O.
"
VSS 12
" D3
TOP VIEW
92.CS- 3~993
CDM5332
TERMINAL ASSIGNMENT
Read-Only Memories (ROMs)
CDM5332, CDM5333
CMOS 4096-Word X a-Bit Static
Read-Only Memory
Features:
• Low power replacement for NMOS ROMs
• Choice of two industry standard pinouts:
CDM5332 is pin compatible with INTEL 2732 and 2332A
CDM5333 is pin compatible with Supertex CM3200, TI TMS 4732,
Motorola MCM 68732 and MCM 68A332
• Fast access time: 350 ns max.
• TTL input and output compatible
• Three state outputs
• Two programmable chip selects
The RCA CDM5332 and CDM5333 are 32,768-bit mask-
programmable CMOS Read-Only Memories organized as
4096 eight-bit words. They are designed to be used with a
wide variety of general-purpose microprocessor systems,
including RCA CDP1800- and CDP6805-series systems.
Two inputs, CS1/0E and CS2, are provided for memory
expansion and output buffer control. CS2 gates the address
and output buffers and powers down the chip to the standby
mode. CS1/0E controls the output buffers to eliminate bus
contention. The active polarity for each chip select is user
mask-programmable.
The CDM5332 and CDM5333 differ only in terminal
assignments and are pin compatible with standard industry
types. CDM5332 is pin compatible with Intel 2732 and
2332A. CDM5333 is pin compatible with Supertex CM3200,
T.1. TMS4732, and Motorola MCM68732 and MCM68A332.
The CDM5332 and CDM5333 are supplied in 24-lead dual-
in-line ceramic packages (D suffix) and 24-lead dual-in-line
plastic packages (E suffix).
DO D! 02 03 04 05 06 07
All
AID
A9
AS
A7
A6
A5
A4
A3 -
A2
A1
AD
...lQ......
=>
.ID
....
=>
!"
.''."".
0:
0
0
'"
I IA7 24 Voo
A6 23 AS
A5 22 A9
A4 4
21 CS2
.....0:-
o~ 3276B-BIT
0~o...
CELL
MATRIX
CHIP
SELECT
CS 1I0E
A3
A2
A1
20 CSI/OE
19 AID
18 All
0=
x
aUF FERS
AND
PROGRAM
AD
00 9
17 07
16 06
CS2
01 10
15 05
02 II
14 04
VSS 12
13 03
92CM-34997
TOP VIEW 92CS- 34995
Fig. 1 - Functional block diagram.
CDM5333
TERMINAL ASSIGNMENT
File Number 1366
__________________________________________________________ 705



GE CDM5332
Read-Only Memories (ROMs) _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
CDM5332, CDM5333
MAXIMUM RATINGS, Absolute-Maximum Values:
DC SUPPLY-VOLTAGE RANGE, (Voo)
(Voltage referenced to V•• terminal) ....................................................................................-0.5 to +7 V
INPUT VOLTAGE RANGE, ALL INPUTS ........................................................................• -0.5 to VDD +0.5 V
DC INPUT CURRENT, ANY ONE INPUT ................................................................................... ±10 mA
POWER DISSIPATION PER PACKAGE (Po):
For TA = -40 to +60° C (PACKAGE TYPE E) ............................................................................... 500 mW
ForTA = +60 to +85°C (PACKAGE TYPE E) ................................................. Derate Linearly at 12 mW/oC to 200 mW
ForTA= -55 to +l00°C (PACKAGE TYPE D) .............................................................................. 500 mW
ForTA= +100 to 1~5°C (PACKAGE TYPE D) ............................................... Derate Linearly at 12 mW/oC to 200 mW
DEVICE DISSIPATION PER OUTPUT TRANSISTOR
ForTA = FULL PACKAGE-TEMPERATURE RANGE (All Package Types) ................................................... 100 mW
OPERATING-TEMPERATURE RANGE (TA):
PACKAGE TYPE 0 ............................................................................................... -55to+125°C
PACKAGE TYPE E ................................................................................................ -40 to +85° C
STORAGE-TEMPERATURE RANGE (T...) ........................................................................... -65 to +l50°C
LEAD TEMPERATURE (DURING SOLDERING):
At distance 1/16 ± 1/32 in. (1.59 ± 0.79 mm) from case for 10 s max. . .................................................... +265°C
RECOI4MENDED OPERATING CONDITIONS at TA = -40 to +85° C
For maximum reliability, nominal operating conditions should be .elected .0 that operation I. alway. within the following
range.:
CHARACTERISTIC
DC Operating Voltage Range
Input Voltage Range
LIMITS
Min.
4
Vss
Max.
6.5
Voo
UNITS
V
STATIC ELECTRICAL CHARACTERISTICS at TA = -40 to +85°C, Voo = 5 V ± 10%, Except a. noted
CHARACTERISTIC
Quiescent Device Current
Output Low Drive (Sink) Current
Output" High Drive (Source) Current
Output Voltage Low-Level
Output Voltage High-Level
Input Low Voltage
Input High Voltage
Input Leakage Current
3-State Output Leakage Current
Input Capacitance
Outout Caoacitance
Standby Device Current
Operating Device Current
100A
10L
10H
VOL
VOH
V,L
V'H
I'N
lOUT
C'N
COUT
ISOyA
IOPERA
CONDITIONS
LIMITS
ALL TYPES
Vo VIN
(V)
-
0.4
Voo -0.4
-
-
0.5, Voo -0.5
0.5, Voo -0.5
-
0, Voo
-
-
-
-
(V)
0, Voo
0, Voo
0, Voo
0, Vo"
0, Voo
-
-
0, Voo
0, Voo
-
-
0.8 V,2.4 V
0.8 V,2.4 V
Min.
-
2.4
-1.2
-
Voo -0.1
-
2.4
-
-
-
-
-
-
Typ.·
2
4
-2
0
Voo
-
-
-
-
5
10
0.25
15
Max.
50
-
-
0.1
-
0.8
-
±1
±1
7.5
15
0.5
25
UNITS
pA
rnA
V
pA
pF
rnA
ASee chart on page 3 for test conditions
'Typical values are for TA= 25° C and nominal Voo.
706 ____________________________________________________________



GE CDM5332
<l.STATIC CHARACTERISTIC Device Currenl Tesl Condilions:
Read-Only Memories (ROMs)
CDM5332, CDM5333
CHARACTERISTIC
100 Quiescent
Device Current
ISBY . ::.tanooy
Device Current
IOPER - Operating
Device Current
CHIP SELECT
STATUS
Any Chip
Select Disabled
CS2 Disabled
at TTL Level
CS2 Active
CS1 Don't Care
ADDRESS
INPUT TO TOGGLE
FREQUENCY
0
1 MHz
1 MHz
OUTPUT
LOADING
Open Circuit
Open Circuit
Open Circuit
= =DYNAMIC ELECTRICAL CHARACTERISTICS al T. -40 10 +850 C, Voo 5 V ± 10%,
= =Inpul 1,,1, 10 ns; CL 100 pF, and 1 TTL Load; Inpul Pulse Levels: 0.8 V 10 2.2 V
CHARACTERISTIC
Address Access Time
CS2 Enable to Output Active
CS1/0E Enable to Output Active
CS2 Enable Access
CS1/0E Enable to Output Valid
Data Hold After Address
CS2 Disable to Output High Z
CS1/0E Disable to Output High Z
Cycle Time
tAvav
tS2vax
tS 1VQX
tS 2VQV
tS1VQV
tAxax
tS2XOZ
ts1xoz
teye
LIMITS
Min.
Max.
- 350
10 -
0-
- 350
- 150
50 -
- 120
- 120
-350
UNITS
ns
AO-AII
CS2
'S2vax(2)
CSI/OE
_ _DATA OUT ----r--"R~:2S~
L)F,C2~
(5)
t 5 IXQ Z'
NOTE.:
(1) A.lum•• ls,',IOV end \arvov
Ire ..lIlfled.
(2) Output Active require. both
CS1/0E end CS2 Active.
(3) A..ums. tAvOV and IS1VQV
",vo..Ire ••tl,fled.
(4) A.lum,. I"voy and
Ire 1.11,lled.
(5) :!~::~r;;:~~~f~~~~. or CS2
1(6) Oln,rll•• 50-nl Velld Output
Pul••• (I.•., Icyc-t.\\IQv+t.~XQx).
NOTE: TIMING MEASUREMENT REFERENCE LEVEL IS 1.5 V.
92CM- 36678
Fig. 2 - Timing waveforms.
_________________________________________________________________ 707







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