Control Thyristors. IR370SG12HCB Datasheet

IR370SG12HCB Thyristors. Datasheet pdf. Equivalent


International Rectifier IR370SG12HCB
Preliminary Data Sheet I0212J 12/99
PHASE CONTROL THYRISTORS
IR370SG..HCB
Junction Size:
Square 370 mils
Wafer Size:
4"
VRRM Class:
Passivation Process:
600 to 1200 V
Glassivated MESA
Reference IR Packaged Part: 50RIA Series
Major Ratings and Characteristics
Parameters
Units Test Conditions
VTM Maximum On-state Voltage
1.2 V
TJ= 25°C, IT = 25 A
VDRM/VRRM Direct and Reverse Breakdown Voltage
600 to 1200 V TJ = 25°C, IDRM /IRRM = 100 µA
(1)
IGT
Max. Required DC Gate Current to Trigger
150 mA
TJ= 25° C, anode supply = 6 V, resistive load
VGT Max. Required DC Gate Voltage to Trigger 2 V TJ = 25° C, anode supply = 6 V, resistive load
IH Holding Current Range
5 to 200 mA Anode supply = 6 V, resistive load
IL MaximumLatchingCurrent
(1) Nitrogen flow on die edge.
400mA Anode supply = 6 V, resistive load
Mechanical Characteristics
Nominal Back Metal Composition, Thickness
Nominal Front Metal Composition, Thickness
Chip Dimensions
Wafer Diameter
Wafer Thickness
Maximum Width of Sawing Line
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
370 x 370 mils (see drawing)
100 mm, with std. <110> flat
370 µm ± 10 µm
130 µm
0.25 mm diameter minimum
See drawing
Storage in original container, in dessicated
nitrogen, with no contamination
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IR370SG12HCB Datasheet
Recommendation IR370SG12HCB Datasheet
Part IR370SG12HCB
Description Phase Control Thyristors
Feature IR370SG12HCB; Preliminary Data Sheet I0212J 12/99 PHASE CONTROL THYRISTORS IR370SG..HCB Junction Size: Square .
Manufacture International Rectifier
Datasheet
Download IR370SG12HCB Datasheet




International Rectifier IR370SG12HCB
IR370SG..HCB
Preliminary Data Sheet I0212J 12/99
Ordering Information Table
Device Code
IR 370 S G 12 H CB
1 2 34
56
7
1 - International Rectifier Device
2 - Chip Dimension in Mils
3 - Type of Device: S = Solderable SCR
4 - Passivation Process: G = Glassivated MESA
5 - Voltage code: Code x 100 = VRRM
6 - Metallization: H = Silver (Anode) - Silver (Cathode)
7 - CB = Probed Uncut Die (wafer in box)
None = Probed Die in chip carrier
Available Class
06 = 600 V
08 = 800 V
12 =1200 V
Outline Table
All dimensions are in millimeters
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International Rectifier IR370SG12HCB
Wafer Layout
IR370SG..HCB
Preliminary Data Sheet I0212J 12/99
TOP VIEW
N° 69 Basic Cells
All dimensions are in millimiters
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