E-pHEMT MMIC. AE510 Datasheet

AE510 MMIC. Datasheet pdf. Equivalent

AE510 Datasheet
Recommendation AE510 Datasheet
Part AE510
Description E-pHEMT MMIC
Feature AE510; E-pHEMT MMIC Product Features • 30 ~ 3000MHz • High Gain • High linearity • SOIC-8 SMD Type package .
Manufacture RFHIC
Datasheet
Download AE510 Datasheet




RFHIC AE510
E-pHEMT MMIC
Product Features
• 30 ~ 3000MHz
• High Gain
• High linearity
• SOIC-8 SMD Type package
• Lower manufacturing cost
• -74dBc CSO 79 Channels @ +30dBmV/ch
• -73dBc CTB 79 Channels @ +30dBmV/ch
AE510
Applications
• Low Noise Amplifier for
CATV
• Cable Modem
• FTTH (G-PON, GE-PON)
• Optical node
Package Type : SOIC-8
Description
AE510 is designed as low cost drive amplifiers for many applications including FTTH, CATV System.
This MMIC is based on Gallium Arsenide Enhancement Mode pHEMT which shows low current draw and very low noise.
The data in this spec sheet is valid only for 75ohm application. 50ohm data is in a separate spec sheet.
Electrical Specifications
PARAMETER
Frequency
UNIT
MHz
MIN
30
TYP
-
MAX
3000
Gain
dB 17 19
14 17
-
-
Gain Flatness
Input Return Loss
dB
-
0.7
2.5
-
dB - -17 -
Output Return Loss
dB - -18 -
Output IP3
dBm 37
40
-
1dB Compression Point
dBm 20
23
-
Noise Figure
dB - 3.0 4.0
CSO
CTB
dBc - -74 -69
30 ~ 1004MHz
dBc - -73 -68
DC Current
mA - 200 -
Note
1. Test conditions unless otherwise noted. Test Freq = 500MHz, T=25, Vdd=5V, 75Ω system
2. OIP3 measured with 2 tones at an output power of +5dBm/tone separated by 1MHz, Test Freq = 500MHz
CONDITION
-
30 ~ 1000MHz
50 ~ 2700MHz
30 ~ 1000MHz
50 ~ 2700MHz
-
-
@ 500MHz/5dBm 2tone
@500MHz
30 ~ 1000MHz
79 channel, +30dBmV/ch
Vdd = 5.0V
Absolute Maximum Ratings
PARAMETER
Device Voltage
Operating Temperature
Storage Temperature
ESD Human Body Model
Moisture Sensitivity Level
Junction Temperature (Tj)
Thermal Resistance (Rth)
UNIT
VDC
-
-
/W
MIN
-
-40
-40
-
-
-
-
TYP
5
-
-
Class 1A
MSL1
-
45
MAX
8
85
150
-
-
180
-
Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
1/6
All specifications may change without notice
Version 1.1



RFHIC AE510
E-pHEMT MMIC
AE510
Application Circuit @ 30 ~ 1000MHz, 75ohm System, VDD=5V
Typical Performance @ VDD=5V, IDS=200mA, T=25, 75ohm System
PARAMETER
Frequency
Gain(S21)
Input Return Loss(S11)
Output Return Loss(S22)
Output IP3
1dB Compression Point
Noise Figure
CSO*
CTB*
Current
UNIT
MHz
dB
dB
dB
dBm
dBm
dB
dBc
dBc
mA
TYPICAL
30 500 1000
18.5 19.2 18.6
-7.5 -27.2 -19.7
-8.0 -18.2 -15.5
35.2 40 35.8
21.5 23 22
2.8 2.9 3.2
-74
-73
200
* 79channels_Flat, +30dBmV
21.0
20.0
19.0
18.0
17.0
16.0
30
Gain vs. Frequency
200 400 600
Freq(MHz)
85°C
25°C
- 40°C
800 1000
10.0
0.0
-10.0
-20.0
-30.0
-40.0
30
S11 vs. Frequency
200 400 600
Freq(MHz)
85°C
25°C
- 40°C
10.0
0.0
-10.0
-20.0
-30.0
-40.0
800 1000
30
S22 vs. Frequency
85°C
25°C
- 40°C
200 400 600 800 1000
Freq(MHz)
Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
2/6
All specifications may change without notice
Version 1.1



RFHIC AE510
E-pHEMT MMIC
AE510
50.0
45.0
40.0
35.0
30.0
25.0
30
OIP3 vs. Frequency
85°C
25°C
- 40°C
200 400 600 800 1000
Freq(MHz)
6.0
5.0
4.0
3.0
2.0
1.0
30
Noise Figure vs. Frequency
85°C
25°C
- 40°C
200 400 600 800 1000
Freq(MHz)
28
26
24
22
20
18
30
P1dB vs. Frequency
85°C
25°C
- 40°C
200 400 600 800 1000
Freq(MHz)
Application Circuit @ 50 ~ 2700MHz, 75ohm System, VDD=5V
Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
3/6
All specifications may change without notice
Version 1.1







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)