BSS123BKN3

CYStech Electronics Corp. Spec. No. : C591N3 Issued Date : 2016.12.07 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode MOSFET BSS123BKN3 BVDSS ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=100mA RDS(ON)@VGS=4.5V, ID=100mA 100V 0.19A 2.8Ω(typ) 3.0Ω(typ) Features ESD protected gate High speed switching Pb-free lead plating and halogen-free package Easily designed drive circuits Low-voltage drive Easy to use in parallel Symbol BSS123BKN3 D G G：Gate S S：Source D：Drain Outline SOT-23 D S G Ordering Information Device BSS123BKN3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name BSS123BKN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C591N3 Issued Date : ...