GaN Hybrid Power Amplifier
GaN Hybrid Power Amplifier HT0808-15A
Product Features
• GaN on SiC HEMT • 2-Stage Amplifier 50ohms Matching • Surface ...
Description
GaN Hybrid Power Amplifier HT0808-15A
Product Features
GaN on SiC HEMT 2-Stage Amplifier 50ohms Matching Surface Mount Hybrid Type Small Size & Mass High Efficiency
Applications
RF Sub-Systems Base Station Repeater 4G/LTE system Small cell
Package Type : NP-1EL
Description
The HT0808-15A is designed for LTE Repeater & RF Sub-systems application frequencies from 869 ~ 894MHz This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance, High power density.
Electrical Specifications @ Vds =28V, Ta=25℃
PARAMETER
UNIT
MIN
TYP MAX
Frequency Range
MHz
869
-
894
Power Gain
34 37 39
Gain Flatness
dB -
0.6
-
Input Return Loss
- -10 -6.0
Pout @ Average
dBm
-
33
-
Pout @ Psat
dBm
40.8
41.5
-
ACLR @ BW 10MHz LTE (PAPR 7.5dB)
dBc
-
-32 -27 -53 -
Drain Efficiency % 23
26
-
Total Ids mA - 280 -
VSupply Voltage
V-
-3.0 28
Caution The drain voltage must be supp...
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