GaN Hybrid Power Amplifier
GaN Hybrid Power Amplifier HT0808-30A
Product Features
• GaN on SiC HEMT • In/Out Impedance Matching • Surface Mount Hy...
Description
GaN Hybrid Power Amplifier HT0808-30A
Product Features
GaN on SiC HEMT In/Out Impedance Matching Surface Mount Hybrid Type Small Size & Mass High Efficiency Low Cost Custom design available
Applications
RF Sub-Systems Base Station Repeater LTE system
Package Type : NP-1EL
Description
The HT0808-30A is designed for LTE Repeater & RF Sub-systems application frequencies from 869 ~ 894MHz This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance, High power density.
Electrical Specifications @ Vds =28V, Ta=25℃
PARAMETER
UNIT
MIN
TYP
MAX
Frequency Range
MHz
869
-
894
Power Gain
35 37 39
Gain Flatness
dB -
0.3 1.0
Input Return Loss
- -12 -8
Pout @ Average dBm - 37 -
Pout @ Psat
dBm 44
45
-
ACLR @ BW 10MHz LTE (PAPR 7.5dB)
dBc
-
-32 -28 -53 -
Drain Efficiency % 25
28
-
Ids
mA -
630 710
V-
-3.0 -2.0
Supply Voltage
V 27.5
28
-
Caution The drai...
Similar Datasheet