HT0808-30A

GaN Hybrid Power Amplifier HT0808-30A Product Features GaN on SiC HEMT In/Out Impedance Matching Surface Mount Hybrid Type Small Size & Mass High Efficiency Low Cost Custom design available Applications RF Sub-Systems Base Station Repeater LTE system Package Type : NP-1EL Description The HT0808-30A is designed for LTE Repeater & RF Sub-systems application frequencies from 869 ~ 894MHz This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance, High power density. Electrical Specifications @ Vds =28V, Ta=25℃ PARAMETER UNIT MIN TYP MAX Frequency Range MHz 869 - 894 Power Gain 35 37 39 Gain Flatness dB - 0.3 1.0 Input Return Loss - -12 -8 Pout @ Average dBm - 37 - Pout @ Psat dBm 44 45 - ACLR @ BW 10MHz LTE (PAPR 7.5dB) dBc - -32 -28 -53 - Drain Efficiency % 25 28 - Ids mA - 630 710 V- -3.0 -2.0 Supply Voltage V 27.5 28 - Caution The drai...