IMD10AMT1G
Dual Bias Resistor Transistor
NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Ne...
IMD10AMT1G
Dual Bias Resistor
Transistor
NPN and
PNP Silicon Surface Mount
Transistors with Monolithic Bias Resistor Network
High Current: IC = 500 mA max This is a Pb−Free Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector−Base Voltage
V(BR)CBO
Collector−Emitter Voltage
V(BR)CEO
Emitter−Base Voltage
V(BR)EBO
Collector Current − Continuous
IC
THERMAL CHARACTERISTICS
50 50 5.0 500
Vdc Vdc Vdc mAdc
Characteristic
Symbol
Max
Unit
Power Dissipation*
PD 285 mW
Junction Temperature
TJ 150 °C
Storage Temperature
Tstg
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *Total for both
Transistors.
http://onsemi.com
(3) (2)
(1)
Q2 (4)
R1 Q1
R2 R1
(5) SC−74
(6)
MARKING DIAGRAM
6 1
SC−74R 318AA Style 21
D10 M G
D10 = Specific Device C...
