Common Drain Dual N-Channel Enhancement Mode MOSFET
CYStech Electronics Corp.
Spec. No. : C779V8 Issued Date : 2016.12.19 Revised Date : Page No. : 1/9
Common Drain Dual ...
Description
CYStech Electronics Corp.
Spec. No. : C779V8 Issued Date : 2016.12.19 Revised Date : Page No. : 1/9
Common Drain Dual N -Channel Enhancement Mode MOSFET
MTA012A02CDV8 BVDSS ID
VGS=4.5V, TA=25°C
VGS=4.5V, ID=5A
RDSON (TYP.) VGS=2.5V, ID=2.6A
Features
VGS=1.8V, ID=1A
Simple drive requirement Low gate charge Low on-resistance Fast switching speed ESD protected gate Pb-free lead plating and halogen-free package
20V 9A
12.0 mΩ 16.2 mΩ 32.1 mΩ
Equivalent Circuit
MTA012A02CDV8
Outline
Pin 1
DFN3×3
G：Gate S：Source D：Drain
Ordering Information
Device
MTA012A02CDV8-0-T6-G
Package
DFN3×3 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTA012A02CDV8
CYStek Product Specification
CYStech Electronics ...
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