P-Channel Enhancement Mode Power MOSFET
Spec. No. : C891J3
CYStech Electronics Corp.
Issued Date : 2016.12.23 Revised Date :
P-Channel Enhancement Mode Power...
Description
Spec. No. : C891J3
CYStech Electronics Corp.
Issued Date : 2016.12.23 Revised Date :
P-Channel Enhancement Mode Power MOSFET
MTB115P10KJ3
Features
Low Gate Charge Simple Drive Requirement ESD Protected Gate Pb-free Lead Plating & Halogen-free Package
BVDSS ID@VGS=-10V, TC=25°C
RDS(ON)@VGS=-10V, ID=-10A
RDS(ON)@VGS=-4.5V, ID=-8A
-100V -15A 82mΩ(typ) 107mΩ(typ)
Equivalent Circuit
MTB115P10KJ3
Outline
TO-252(DPAK)
G:Gate D:Drain S:Source
G DS
Ordering Information
Device MTB115P10KJ3-0-T3-G
Package
TO-252 (Pb-free lead plating & halogen-free package)
Shipping 2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products Product name
MTB115P10KJ3
CYStek Product Specification
Spec. No. : C891J3
CYStech Electronics Corp.
Issued Date : 2016.12.23 Revised Date :
Absolute Maximum Ratings ...
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