MTB1D5N03H8

CYStech Electronics Corp. Spec. No. : C984H8 Issued Date : 2017.01.06 Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTB1D5N03H8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and Halogen-free package RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 30V 156A(silicon limit) 84A(package limit) 23.5A 1.3mΩ(typ) 1.6mΩ(typ) Symbol MTB1D5N03H8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTB1D5N03H8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTB...