N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C984H8 Issued Date : 2017.01.06 Revised Date : Page No. : 1/ 10
N-Channel Enhanc...
Description
CYStech Electronics Corp.
Spec. No. : C984H8 Issued Date : 2017.01.06 Revised Date : Page No. : 1/ 10
N-Channel Enhancement Mode Power MOSFET
MTB1D5N03H8 BVDSS ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
Features
Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and Halogen-free package
RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A
30V 156A(silicon limit) 84A(package limit)
23.5A 1.3mΩ(typ) 1.6mΩ(typ)
Symbol
MTB1D5N03H8
G:Gate D:Drain S:Source
Outline
Pin 1
S S S G
DFN5×6
D D D D
G S
S
S
D D D D
Pin 1
Ordering Information
Device MTB1D5N03H8-0-T6-G
Package
DFN 5 ×6 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products Product name
MTB...
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