MTB20A04DH8

CYStech Electronics Corp. Spec. No. : C978H8 Issued Date : 2017.01.19 Revised Date : 2017.02.10 Page No. : 1/ 11 Dual N-Channel Enhancement Mode Power MOSFET MTB20A04DH8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C Features ID@VGS=10V, TA=70°C Low On Resistance RDS(ON)@VGS=10V, ID=8A Simple Drive Requirement Low Gate Charge RDS(ON)@VGS=4.5V, ID=4A Fast Switching Characteristic Pb-free lead plating and Halogen-free package 40V 18.5A 11.7A 5.6A 4.5A 16.4mΩ(typ) 18.5mΩ(typ) Equivalent Circuit MTB20A04DH8 Outline Pin 1 DFN5×6 Pin 1 G：Gate D：Drain S：Source Ordering Information Device MTB20A04DH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name M...