Dual P-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C587Q8 Issued Date : 2011.01.27 Revised Date : 2016.12.05 Page No. : 1/9
Dual P-...
Description
CYStech Electronics Corp.
Spec. No. : C587Q8 Issued Date : 2011.01.27 Revised Date : 2016.12.05 Page No. : 1/9
Dual P-Channel Logic Level Enhancement Mode Power MOSFET
MTB24B03Q8 BVDSS
ID @VGS=-10V, TC=25 °C
RDSON(MAX)@VGS=-10V, ID=-8A
Features
RDS(ON)=24mΩ(max.)@VGS=-10V, ID=-8A Simple drive requirement Low on-resistance Fast switching speed Dual P-ch MOSFET package Pb-free lead plating & Halogen-free package
RDSON(MAX)@VGS=-4.5V, ID=-6A
-30V -8A 18mΩ(typ.) 27mΩ(typ.)
Equivalent Circuit
MTB24B03Q8
Outline
SOP-8
D2 D2 D1
D1
G:Gate D:Drain S:Source
Pin 1
G2 S2 G1 S1
Ordering Information
Device MTB24B03Q8-0-T3-G
Package
Shipping
SOP-8 (Pb-free lead plating and halogen-free package)
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products Product name
MTB24B03Q8
CY...
Similar Datasheet