P- & N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C703H8 Issued Date : 2016.11.28 Revised Date : Page No. : 1/14
N- AND P-Channel ...
Description
CYStech Electronics Corp.
Spec. No. : C703H8 Issued Date : 2016.11.28 Revised Date : Page No. : 1/14
N- AND P-Channel Enhancement Mode MOSFET
MTD080C10H8
Features
Simple drive requirement Low on-resistance Fast switching speed Pb-free lead plating and halogen-free package
BVDSS ID@VGS=10V(-10V), TA=25°C ID@VGS=10V(-10V), TC=25°C RDSON(typ)@VGS=10V(-10V) RDSON(typ)@VGS=4.5V(-4.5V)
N-CH 100V 3.6A
10.4A 74mΩ
82mΩ
P-CH -100V -3.1A
-8.8A 114mΩ
128mΩ
Equivalent Circuit
MTD080C10H8
Outline
Pin 1
DFN5×6 Pin 1
G:Gate S:Source D:Drain
Ordering Information
Device MTD080C10H8-0-T6-G
Package
Shipping
DFN 5 ×6
(Pb-free lead plating & halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTD080C10H8
CYStek Product Specification
CYStech Electroni...
Similar Datasheet