MTDB6N20H8

CYStech Electronics Corp. Spec. No. : C875H8 Issued Date : 2016.12.19 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTDB6N20H8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDSON(typ)@VGS=10V, ID=3A RDSON(typ)@VGS=4.5V, ID=2A 200 V 8A 1.8A 285 mΩ 287 mΩ Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Pb-free lead plating and Halogen-free package Symbol MTDB6N20H8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device Package Shipping MTDB6N20H8-0-T6-G DFN5×6 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTDB6N20H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C87...