N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C875H8 Issued Date : 2016.12.19 Revised Date : Page No. : 1/10
N-Channel Enhance...
Description
CYStech Electronics Corp.
Spec. No. : C875H8 Issued Date : 2016.12.19 Revised Date : Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTDB6N20H8
BVDSS ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDSON(typ)@VGS=10V, ID=3A
RDSON(typ)@VGS=4.5V, ID=2A
200 V 8A 1.8A
285 mΩ 287 mΩ
Features
Single Drive Requirement Low On-resistance Fast Switching Characteristic Pb-free lead plating and Halogen-free package
Symbol
MTDB6N20H8
G:Gate D:Drain S:Source
Outline
Pin 1
S S S G
DFN5×6
D D D D
G S
S
S
D D D D
Pin 1
Ordering Information
Device
Package
Shipping
MTDB6N20H8-0-T6-G
DFN5×6 (Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTDB6N20H8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C87...
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