Document
CYStech Electronics Corp.
Spec. No. : C871Q8 Issued Date : 2016.11.28 Revised Date : Page No. : 1/9
Dual N-Channel Enhancement Mode Power MOSFET
MTE080A10Q8
Features
• Simple drive requirement • Low on-resistance • Fast switching speed • Dual N-ch MOSFET package • Pb-free lead plating & Halogen-free package
BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C
RDSON@VGS=10V, ID=2.5A
RDSON@VGS=6V, ID=2.0A
100V 2.8A
5.0A 74mΩ(typ) 82mΩ(typ)
Equivalent Circuit
MTE080A10Q8
Outline
SOP-8
D2 D2 D1
D1
G:Gate D:Drain S:Source
Pin 1
G2 S2 G1 S1
Ordering Information
Device MTE080A10Q8-0-T3-G
Package
Shipping
SOP-8 (Pb-free lead plating and halogen-free package)
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products Product name
MTE080A10Q8
Preliminary
CYStek Product Specification
CYStech Elec.