MTE2D0N04H8

CYStech Electronics Corp. Spec. No. : C072H8 Issued Date : 2016.03.02 Revised Date : 2016.03.04 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTE2D0N04H8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C Features RDS(ON)@VGS=10V, ID=20A Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and Halogen-free package 40V 145A(silicon limit) 84A(package limit) 23A 1.65mΩ(typ) Symbol MTE2D0N04H8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source Ordering Information Device MTE2D0N04H8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTE2D0N04H8 CYStek Product Specification CYStech Electronics Corp. ...