N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C072H8 Issued Date : 2016.03.02 Revised Date : 2016.03.04 Page No. : 1/ 10
N-Cha...
Description
CYStech Electronics Corp.
Spec. No. : C072H8 Issued Date : 2016.03.02 Revised Date : 2016.03.04 Page No. : 1/ 10
N-Channel Enhancement Mode Power MOSFET
MTE2D0N04H8 BVDSS ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
Features
RDS(ON)@VGS=10V, ID=20A
Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and Halogen-free package
40V 145A(silicon limit) 84A(package limit) 23A 1.65mΩ(typ)
Symbol
MTE2D0N04H8
Outline
Pin 1
DFN5×6
G:Gate D:Drain S:Source
Ordering Information
Device MTE2D0N04H8-0-T6-G
Package
DFN 5 ×6 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products Product name
MTE2D0N04H8
CYStek Product Specification
CYStech Electronics Corp.
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