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MTE2D4N06E3

Cystech Electonics

N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C933E3 Issued Date : 2013.03.20 Revised Date : Page No. : 1/8 N-Channel Enhancem...


Cystech Electonics

MTE2D4N06E3

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Description
CYStech Electronics Corp. Spec. No. : C933E3 Issued Date : 2013.03.20 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTE2D4N06E3 BVDSS ID @VGS=10V RDSON(TYP) @ VGS=10V, ID=20A RDSON(TYP) @ VGS=7V, ID=20A 60V 120A 2.6mΩ 2.8mΩ Features Simple Drive Requirement Fast Switching Characteristic RoHS compliant package Symbol MTE2D4N06E3 Outline TO-220 G:Gate D:Drain S:Source GDS Ordering Information Device Package MTE2D4N06E3-0-UB-S TO-220 (Pb-free lead plating package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTE2D4N06E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C933E3 Issued Date : 2013.03.20 Revised Date : Page No. : 2/8 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parame...




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