N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C933F3 Issued Date : 2015.12.11 Revised Date : Page No. : 1/9
N-Channel Enhancem...
Description
CYStech Electronics Corp.
Spec. No. : C933F3 Issued Date : 2015.12.11 Revised Date : Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTE2D4N06F3 BVDSS ID @VGS=10V, TC=25°C
RDSON(TYP) @ VGS=10V, ID=20A
RDSON(TYP) @ VGS=7V, ID=20A
60V 60A 3.3mΩ 3.5mΩ
Features
Simple Drive Requirement Fast Switching Characteristic RoHS compliant package
Symbol
MTE2D4N06F3
Outline
TO-263
G:Gate D:Drain S:Source
G DS
Ordering Information
Device
Package
Shipping
MTE2D4N06F3-0-T7-X
TO-263 (Pb-free lead plating and RoHS compliant package)
800 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T7 : 800 pcs / tape & reel, 13” reel Product rank, zero for no rank products
Product name
MTE2D4N06F3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Dr...
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