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MTE2D4N06F3

Cystech Electonics

N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C933F3 Issued Date : 2015.12.11 Revised Date : Page No. : 1/9 N-Channel Enhancem...


Cystech Electonics

MTE2D4N06F3

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Description
CYStech Electronics Corp. Spec. No. : C933F3 Issued Date : 2015.12.11 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTE2D4N06F3 BVDSS ID @VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=20A RDSON(TYP) @ VGS=7V, ID=20A 60V 60A 3.3mΩ 3.5mΩ Features Simple Drive Requirement Fast Switching Characteristic RoHS compliant package Symbol MTE2D4N06F3 Outline TO-263 G:Gate D:Drain S:Source G DS Ordering Information Device Package Shipping MTE2D4N06F3-0-T7-X TO-263 (Pb-free lead plating and RoHS compliant package) 800 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T7 : 800 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTE2D4N06F3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Dr...




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