MTE2D4N06F7T

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE2D4N06F7T Spec. No. : C933F7T Issued Date : 2016.12.30 Revised Date : 2017.01.03 Page No. : 1/9 Features Simple Drive Requirement Fast Switching Characteristic RoHS compliant package BVDSS ID @VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=20A 60V 172A 2.0mΩ Symbol MTE2D4N06F7T Outline TO-263-7L-4C G：Gate D：Drain S：Source Ordering Information Device Package Shipping MTE2D4N06F7T-0-T7-X TO-263-7L-4C (Pb-free lead plating and RoHS compliant package) 800 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T7 : 800 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTE2D4N06F7T CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current...