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MTE2D4N06F7T
N-Channel Enhancement Mode Power MOSFET
Description
CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE2D4N06F7T Spec. No. : C933F7T Issued Date : 2016.12.30 Revised Date : 2017.01.03 Page No. : 1/9 Features Simple Drive Requirement Fast Switching Characteristic RoHS compliant package BVDSS ID @VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=20A 60V 172A 2.0mΩ Symbol MTE2D4N06F7T Outli...
Cystech Electonics
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