N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTE2D4N06F7T
Spec. No. : C933F7T Issued Date : 2016.1...
Description
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTE2D4N06F7T
Spec. No. : C933F7T Issued Date : 2016.12.30 Revised Date : 2017.01.03 Page No. : 1/9
Features
Simple Drive Requirement Fast Switching Characteristic RoHS compliant package
BVDSS ID @VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=20A
60V 172A 2.0mΩ
Symbol
MTE2D4N06F7T
Outline
TO-263-7L-4C
G:Gate D:Drain S:Source
Ordering Information
Device
Package
Shipping
MTE2D4N06F7T-0-T7-X
TO-263-7L-4C (Pb-free lead plating and RoHS compliant package)
800 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T7 : 800 pcs / tape & reel, 13” reel Product rank, zero for no rank products
Product name
MTE2D4N06F7T
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current...
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