Resistor Transistors. MUN5235DW1 Datasheet


MUN5235DW1 Transistors. Datasheet pdf. Equivalent


MUN5235DW1


Dual NPN Bias Resistor Transistors
MUN5235DW1, NSBC123JDXV6, NSBC123JDP6

Dual NPN Bias Resistor Transistors R1 = 2.2 kW, R2 = 47 kW

NPN Transistors with Monolithic Bias Resistor Network

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Features
• Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant

MAXIMUM RATINGS (TA = 25°C, common for Q1 and Q2, unless otherwise noted)

Rating

Sy...



MUN5235DW1
MUN5235DW1,
NSBC123JDXV6,
NSBC123JDP6
Dual NPN Bias Resistor
Transistors
R1 = 2.2 kW, R2 = 47 kW
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(TA = 25°C, common for Q1 and Q2, unless otherwise noted)
Rating
Symbol
Max
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current Continuous
IC 100 mAdc
Input Forward Voltage
VIN(fwd)
12
Vdc
Input Reverse Voltage
VIN(rev)
5
Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
Package
Shipping
MUN5235DW1T1G,
SMUN5235DW1T1G
SOT363
3,000 / Tape & Reel
SMUN5235DW1T3G
SOT363 10,000 / Tape & Reel
NSBC123JDXV6T1G
SOT563
4,000 / Tape & Reel
NSBC123JDXV6T5G
SOT563
8,000 / Tape & Reel
NSBC123JDP6T5G
SOT963
8,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
February, 2014 Rev. 1
1
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PIN CONNECTIONS
(3) (2) (1)
R1
Q1
R2 R1
(4) (5)
R2
Q2
(6)
MARKING DIAGRAMS
SOT363
CASE 419B
6
7M M G
G
1
SOT563
CASE 463A
7M M G
G
1
SOT963
CASE 527AD
MG
1G
7M/D
M
G
= Specific Device Code
= Date Code*
= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
Publication Order Number:
DTC123JD/D

MUN5235DW1
MUN5235DW1, NSBC123JDXV6, NSBC123JDP6
THERMAL CHARACTERISTICS
Characteristic
Symbol
MUN5235DW1 (SOT363) ONE JUNCTION HEATED
Total Device Dissipation
TA = 25°C
Derate above 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
MUN5235DW1 (SOT363) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25°C
Derate above 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
RqJL
Junction and Storage Temperature Range
NSBC123JDXV6 (SOT563) ONE JUNCTION HEATED
TJ, Tstg
Total Device Dissipation
TA = 25°C
Derate above 25°C
(Note 1)
(Note 1)
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
RqJA
NSBC123JDXV6 (SOT563) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25°C
Derate above 25°C
(Note 1)
(Note 1)
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
RqJA
Junction and Storage Temperature Range
NSBC123JDP6 (SOT963) ONE JUNCTION HEATED
TJ, Tstg
Total Device Dissipation
TA = 25°C
Derate above 25°C
(Note 4)
(Note 5)
(Note 4)
(Note 5)
PD
Thermal Resistance,
Junction to Ambient
(Note 4)
(Note 5)
RqJA
NSBC123JDP6 (SOT963) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25°C
Derate above 25°C
(Note 4)
(Note 5)
(Note 4)
(Note 5)
PD
Thermal Resistance,
Junction to Ambient
(Note 4)
(Note 5)
RqJA
Junction and Storage Temperature Range
TJ, Tstg
1. FR4 @ Minimum Pad.
2. FR4 @ 1.0 × 1.0 Inch Pad.
3. Both junction heated values assume total power is sum of two equally powered channels.
4. FR4 @ 100 mm2, 1 oz. copper traces, still air.
5. FR4 @ 500 mm2, 1 oz. copper traces, still air.
Max
187
256
1.5
2.0
670
490
250
385
2.0
3.0
493
325
188
208
55 to +150
357
2.9
350
500
4.0
250
55 to +150
231
269
1.9
2.2
540
464
339
408
2.7
3.3
369
306
55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C/W
°C
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
MW
mW/°C
°C/W
MW
mW/°C
°C/W
°C
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