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SSF1N80D

Silikron Semiconductor

MOSFET

                                 Main Product Characteristics: VDSS 800V RDS(on) ID 13Ω (typ.) 1A Features and Bene...


Silikron Semiconductor

SSF1N80D

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Description
                                 Main Product Characteristics: VDSS 800V RDS(on) ID 13Ω (typ.) 1A Features and Benefits: TO-252   Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SSF1N80D    Marking and pin Assignment  Schematic diagram        Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.  Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Curre...




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