SSF1N80D

Main Product Characteristics SSF1N80D 800V N-Channel MOSFET VDSS 800V RDS(on) 13Ω (typ.) ID 1A TO-252(DPAK) Features and Benefits  Advanced MOSFET process technology  Ideal for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150ºC operating temperature Marking and Pin Assignment Schematic Diagram Description The SSF1N80D utilizes the latest processing techniques to achieve high cell density, low onresistance and high repetitive avalanche rating. These features make this device extremely efficient and reliable device for use in power switching applications and a wide variety of other applications. Absolute Max Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source ...