800V N-Channel MOSFET
Main Product Characteristics
SSF1N80D
800V N-Channel MOSFET
VDSS
800V
RDS(on) 13Ω (typ.)
ID 1A
TO-252(DPAK)
Feature...
Description
Main Product Characteristics
SSF1N80D
800V N-Channel MOSFET
VDSS
800V
RDS(on) 13Ω (typ.)
ID 1A
TO-252(DPAK)
Features and Benefits
Advanced MOSFET process technology Ideal for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150ºC operating temperature
Marking and Pin Assignment
Schematic Diagram
Description
The SSF1N80D utilizes the latest processing techniques to achieve high cell density, low onresistance and high repetitive avalanche rating. These features make this device extremely efficient and reliable device for use in power switching applications and a wide variety of other applications.
Absolute Max Ratings
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source ...
Similar Datasheet