MOSFET
Main Product Characteristics:
VDSS
-40V
RDS(on) 24mohm(typ.)
ID -30A Features and Benefits:
TO-252
Advanced MOSF...
Description
Main Product Characteristics:
VDSS
-40V
RDS(on) 24mohm(typ.)
ID -30A Features and Benefits:
TO-252
Advanced MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 100%Avalanche Rated
SSF4031C1
Marking and pin Schematic diagram Assignment
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Symbol ID @ TC = 25℃ ID @ TC = 100℃ IDM
PD @TC = 25℃
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Sourc...
Similar Datasheet
- SSF4031C1 MOSFET - Silikron Semiconductor