SSF6014J8

Main Product Characteristics: VDSS 60V RDS(on) ID 16mΩ (typ.) 22A Features and Benefits: DFN3.3x3.3 Bottom view  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature SSF6014J8 Pin Assignment Schematic diagram Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications Absolute max Rating: Symbol ID @ TC = 25℃ IDM PD @TC = 25℃ VDS VGS EAS IAR TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanch...