MOSFET
Main Product Characteristics:
VDSS
60V
RDS(on) ID
16mΩ (typ.) 22A
Features and Benefits:
DFN3.3x3.3 Bottom view
...
Description
Main Product Characteristics:
VDSS
60V
RDS(on) ID
16mΩ (typ.) 22A
Features and Benefits:
DFN3.3x3.3 Bottom view
Advanced trench MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature
SSF6014J8
Pin Assignment
Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Symbol ID @ TC = 25℃ IDM PD @TC = 25℃ VDS VGS EAS IAR TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanch...
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