Document
SP8J66FRA
-30V Pch +Pch Power MOSFET
VDSS RDS(on)(Max.)
ID PD
-30V 18.5mΩ ±9.0A
2.0W
lFeatures
1) Low on - resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating ; RoHS compliant 4) AEC-Q101 Qualified
lOutline
SOP8
lInner circuit
Datasheet
lApplication Switching
lPackaging specifications
Packing
Reel size (mm) Type Tape width (mm)
Basic ordering unit (pcs) Taping code Marking
Embossed Tape 330 12 2500 TB
SP8J66
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-30 V
Continuous drain current Pulsed drain current
ID ±9.0 A IDP*1 ±36 A
Gate - Source voltage
VGSS
±20 V
Power dissipation (total)
PD*2 2.0 W
PD*3 1.4
Junction temperature
Tj 150 ℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
.