Document
MOS-TECH Semiconductor Co.,LTD
MT8103
P-Channel Enhancement Mode Field Effect Transistor
Product Summary
VDS= -30V ID= -13A (VGS= -10V)
≦ ΩRDS(ON) 10m @VGS= -10V ≦ ΩRDS(ON) 15.5m @VGS= -4.5V
Applications:
▪ Notebook Computer ▪ Portable Battery Pack
Features
Advanced Trench Process Technology. High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired. RoHS Compliant.
℃Absolute Maximum Ratings (TA = 25 unless otherwise noted)
Symbol
VDS VGS ID IDM IS PD
TJ, Tstg
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Maximum Power Dissipation 1 Operating Junction and Storage Temperature Range
10s Steady State
-30 ±20 -13 -9 -50 -2.7 -1.36 3.0 1.5 -55 to 150
Units
V V A A A W
℃
Thermal Resistance Ratings
Symbol
Parameter
RthJA
Maximum Junction-to-Ambient 1
Notes:
.1 Surface Mounted on 1” x 1” FR4 Board.