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MT6L58AT

Toshiba Semiconductor

Silicon NPN Epitaxial Planar Type Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AT MT6L58AT VHF~UHF Band Low Noise Amplifier Applications ...


Toshiba Semiconductor

MT6L58AT

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Description
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AT MT6L58AT VHF~UHF Band Low Noise Amplifier Applications Two devices are built in to the super-thin and ultra super mini (6 pins) package: TU6 Mounted Devices Three-pins (SSM/TESM) mold products are corresponded. Q1: SSM (TESM) MT3S06S (MT3S06T) Q2: SSM (TESM) MT3S03AS (MT3S03AT) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Marking Q1 Q2 10 10 55 1.5 2 15 40 7 10 150 125 −55~125 Unit V V V mA mA mW °C °C JEDEC ― JEITA ― TOSHIBA 2-2JA1C Weight: 0.0045 g (typ.) Pin Assignment (top view) 1 2003-09-19 MT6L58AT Electrical Characteristics Q1 (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gai...




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