2N5339U3

2N5339U3 NPN Power Silicon Transistor Features  JANS and JANSR Qualified to MIL-PRF-19500/560  JEDEC Registered 2N5154  Lightweight & Low Power  Ideal for Space, Military, and Other High Reliability Applications  Surface Mount U3 Package Rev. V1 Electrical Characteristics Parameter Test Conditions Symbol Units Off Characteristics Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current IC = 50 mAdc VCE = 100 Vdc VCE = 90 Vdc, VBE = 1.5 Vdc V(BR)CEO Vdc ICEO ICEX µAdc Collector - Base Cutoff Current VCB = 100 Vdc ICBO µAdc Emitter - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Emitter - Base Saturation Voltage Dynamic Characteristics VEB = 6.0 Vdc IC = 0.5 Adc, VCE = 2.0 Vdc IC = 2.0 Adc, VCE = 2.0 Vdc IC = 5.0 Adc, VCE = 2.0 Vdc IC = 2.0 Adc, IB = 0.2 Adc IC = 5.0 Adc, IB = 0.5 Adc IC = 2.0 Adc, IB = 0.2 Adc IC = 5.0 Adc, IB = 0.5 Adc IEBO µAdc HFE VCE(SAT) Vdc VBE(SAT) ...