2SCR586D

NotNeRewcDoemsimgennsded for 2SCR586D NPN 5.0A 80V Middle Power Transistor Parameter VCEO IC Value 80V 5A lFeatures 1) Suitable for Middle Power Driver. 2) Complementary PNP Types : 2SAR586D. 3) Low VCE(sat) 　　VCE(sat)=300mV(Max.). 　　(IC/IB=2A/100mA) lOutline 　 TO-252 　 SC-63 CPT lInner circuit 　 　 　 　 　 Datasheet lApplication LOW FREQUENCY AMPLIFIER lPackaging specifications Part No. Package 2SCR586D TO-252 (CPT) Package size Taping code Reel size (mm) Tape width (mm) Basic ordering unit.(pcs) Marking 6595 TL 330 16 2500 CR586 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/6 20161012 - Rev.002 2SCR586D 　 　 　 　　 　 lAbsolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature 　 　 　 　 　 　 　 　 Datasheet Symbol VCBO VCEO VEBO IC ICP*1 PD*2 Tj Tstg Values 80 80 6 5 10 10 150 -55 to +150 Unit V V V A A W ℃ ℃ NotNeRewcDoemsimgennsded for lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. Collector-base breakdown voltage BVCBO IC = 100μA 80 - - Collector-emitter breakdown voltage BVCEO IC = 1mA 80 - - Emitter-base breakdown voltage BVEBO IE = 100μA 6- - Collector cut-off current ICBO VCB = 80V - - 1.0 Emitter cut-off current Collector-emitter saturation vol...