BLF2047L-90

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2047L/90 UHF power LDMOS transistor Product specification Supersedes data of 2000 Feb 17 2000 Mar 06 Philips Semiconductors UHF power LDMOS transistor Product specification BLF2047L/90 FEATURES High power gain Easy power control Excellent ruggedness Source on underside eliminates DC isolators, reducing common mode inductance Designed for broadband operation (1.8 to 2.0 GHz) Internal input and output matching for high gain and efficiency. APPLICATIONS Common source class-AB operation for PCN and PCS applications in the 1800 to 2000 MHz frequency range. PINNING PIN 1 2 3 handbook, halfpage DESCRIPTION drain gate source, connected to flange 1 23 DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. Top view MBK394 Fig.1 Simplified outline SOT502A. ...