Document
LOW NOISE AMPLIFIERS - CHIP
v03.0209
1 Typical Applications This HMC-ALH216 is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios • Military & Space • Test Instrumentation
HMC-ALH216
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz
Features
Noise Figure: 2.5 dB @ 20 GHz Gain: 18 dB P1dB Output Power: +14 dBm Supply Voltage: +4V @ 90 mA Die Size: 2.25 x 1.58 x 0.1 mm
Functional Diagram
General Description
The HMC-ALH216 is a GaAs MMIC HEMT Wideband Low Noise Amplifier die which operates between 14 and 27 GHz. The amplifier provides 18 dB of gain, 2.5 dB noise figure and +14 dBm of output power at 1 dB gain compression while requiring only 90 mA from a +4V supply voltage. The HMC-ALH216 amplifier is ideal for integration into Multi-Chip-Modules (MCMs) due to its small size.
Electrical Specifications*, TA = +25° C, Vdd= +4V
Parameter
Min.
Frequency Range
Gain
14
Gain Variation over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Supply Cu.