HMC637ALP5E

Data Sheet GaAs, pHEMT, MMIC, 1 W Power Amplifier, 0.1 GHz to 6 GHz HMC637ALP5E FEATURES P1dB output power: 29 dBm Gain: 13 dB Output IP3: 44 dBm 50 Ω matched input/output 32-lead, 5 mm × 5 mm LFCSP package: 25 mm2 APPLICATIONS Telecom infrastructure Microwave radio Very small aperture terminal (VSAT) Military and space Test instrumentation Fiber optics GENERAL DESCRIPTION The HMC637ALP5E is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT) distributed power amplifier which operates between 0.1 GHz and 6 GHz. The amplifier provides 13 dB of gain, 44 dBm output third-order intercept (IP3), and 29 dBm of output power at 1 dB gain compression while requiring 400 mA from a 12 V supply. Gain FUNCTIONAL BLOCK DIAGRAM 32 NIC 31 NIC 30 ACG1 29 ACG2 28 NIC 27 NIC 26 NIC 25 NIC NIC 1 VGG2 2 NIC 3 GND 4 RFIN 5 NIC 6 NIC 7 NIC 8 HMC637ALP5E 24 NIC 23 NIC 22 GND 21 RFOUT/VDD 20 NIC 19 NIC 18 NIC 17 NIC NIC 9 NIC 10 NIC 11 GND 12 VGG1 13 NIC 14 ACG4 15 ACG3 16 17308-001 NIC = NO INTERNAL CONNECTION Figure 1. flatness is ±0.75 dB from 100 MHz to 6 GHz making the HMC637ALP5E ideal for electronic warfare (EW), electronic counter-measure (ECM), radar and test equipment applications. The HMC637ALP5E amplifier radio frequency (RF) I/Os are internally matched to 50 Ω, and the 5 mm × 5 mm lead frame chip scale package (LFCSP) is compatible with high volume surface-mount technology (SMT) assembly equipment. R...